Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1462
Title: Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET
Authors: DE SOUZA FINO, LEONARDO NAVARENHO
DAVINI NETO, ENRICO
DA SILVEIRA, MARCILEI APARECIDA GUAZZELLI
RENAUX, CHRISTIAN
FLANDRE, DENIS
GIMENEZ, SALVADOR PINILLOS
Issue Date: 2015
Journal: Semiconductor Science and Technology (Print)
ISSN: 0268-1242
Citation: DE SOUZA FINO, LEONARDO NAVARENHO; DAVINI NETO, ENRICO; DA SILVEIRA, MARCILEI APARECIDA GUAZZELLI; RENAUX, CHRISTIAN; FLANDRE, DENIS; GIMENEZ, SALVADOR PINILLOS. Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET. Semiconductor Science and Technology (Print), v. 30, n. 10, p. 105024, 2015.
Access Type: Acesso Aberto
DOI: 10.1088/0268-1242/30/10/105024
URI: https://repositorio.fei.edu.br/handle/FEI/1462
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