Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3451
Title: Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors
Authors: TREVISOLI, RENAN
Marcelo Antonio Pavanello
CAPOVILLA, CARLOS EDUARDO
BARRAUD, SYLVAIN
DORIA, RODRIGO TREVISOLI
Issue Date: 24-Apr-2020
Abstract: This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through tridimensional numerical simulations, accounting for different trap configurations, as well as devices with different channel lengths, nanowire widths, and doping concentrations. Experimental results of short-channel junctionless transistors have also been used to demonstrate the model's applicability and accuracy.
Keywords: analytical model
interface traps
junctionless
low-frequency noise (LFN)
nanowires
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN: 0018-9383
Citation: TREVISOLI, R D; PAVANELLO, M. A.; CAPOVILLA, C. E.; BARRAUD, S.; DORIA, R. T. Analytical model for Low-Frequency noise in junctionless nanowire transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, p. 2536-2543, 2020.
Access Type: Acesso Restrito
DOI: 10.1109/TED.2020.2986141
URI: https://repositorio.fei.edu.br/handle/FEI/3451
Appears in Collections:Artigos

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