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|Title:||Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors|
Marcelo Antonio Pavanello
CAPOVILLA, CARLOS EDUARDO
DORIA, RODRIGO TREVISOLI
|Abstract:||This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through tridimensional numerical simulations, accounting for different trap configurations, as well as devices with different channel lengths, nanowire widths, and doping concentrations. Experimental results of short-channel junctionless transistors have also been used to demonstrate the model's applicability and accuracy.|
low-frequency noise (LFN)
|Journal:||IEEE TRANSACTIONS ON ELECTRON DEVICES|
|Citation:||TREVISOLI, R D; PAVANELLO, M. A.; CAPOVILLA, C. E.; BARRAUD, S.; DORIA, R. T. Analytical model for Low-Frequency noise in junctionless nanowire transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, p. 2536-2543, 2020.|
|Access Type:||Acesso Restrito|
|Appears in Collections:||Artigos|
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