Performance and Analysis of n-Type Vertically Stacked Nanowires Regarding Harmonic Distortion
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2020-08-11
Autores
CARVALHO, CESAR AUGUSTO BELCHIOR
SILVA, GENARO MARINIELLO DA
PAZ, BRUNA CARDOSO
BARRAUD, SYLVAIN
VINET, MAUD
FAYNOT, OLIVIER
Marcelo Antonio Pavanello
SILVA, GENARO MARINIELLO DA
PAZ, BRUNA CARDOSO
BARRAUD, SYLVAIN
VINET, MAUD
FAYNOT, OLIVIER
Marcelo Antonio Pavanello
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Periódico
JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
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Citação
CARVALHO, C. A. B.; MARINIELLO, G.; PAZ, B. C.; BARRAUD, S.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. Performance and analysis of n-Type vertically stacked nanowires regarding harmonic distortion. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, p. 1-5, 2020.
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stacked nanowires,harmonic distortion,MOSFET,SOI transistor
Resumo
Thispaperstudies theharmonic distortion (or non-linearity) of vertically stacked SOI nanowireswith differ-ent fin widths and channel lengths. The total harmonic distor-tion and third order harmonic distortion areused as figuresof meritin this work. The harmonicdistortion analysis is per-formed taking in consideration the differences between transis-tor’s intrinsic voltage gain and transconductance over drain current ratio.