Evaluation of Analog Characteristics of n-Type Vertically Stacked Nanowires
N/D
Tipo de produção
Artigo de evento
Data de publicação
2020-09-01
Texto completo (DOI)
Periódico
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
MARINELLO, GENARO
BARRAUD, SYLVAIN
VINET, MAUD
FAYNOT, OLIVIER
PAZ, BRUNA CARDOSO
Marcelo Antonio Pavanello
Orientadores
Resumo
This paper aims at analyzing the analog characteristics of n-type vertically stacked nanowires with 2 channels, varying the fin width and channel length. The basic electrical parameters such as threshold voltage and subthreshold slope are extracted in the linear region, whereas the transconductance, output conductance, and intrinsic voltage gain are extracted in saturation.
Citação
MARINELLO, G.; BARRAUD, S.; VINET, M.; FAYNOT, O.; PAZ, B. C.; PAVANELLO, M. A. Evaluation of analog characteristics of n-Type vertically stacked nanowires. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020.
Palavras-chave
Keywords
Analog; MOSFET; Nanowire; Stacked
Assuntos Scopus
Channel length; Electrical parameter; Fin widths; Intrinsic voltage gains; Linear region; Output conductance; Subthreshold slope