Evaluation of Analog Characteristics of n-Type Vertically Stacked Nanowires
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2020-09-01
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MARINELLO, GENARO
BARRAUD, SYLVAIN
VINET, MAUD
FAYNOT, OLIVIER
PAZ, BRUNA CARDOSO
Marcelo Antonio Pavanello
BARRAUD, SYLVAIN
VINET, MAUD
FAYNOT, OLIVIER
PAZ, BRUNA CARDOSO
Marcelo Antonio Pavanello
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2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
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MARINELLO, G.; BARRAUD, S.; VINET, M.; FAYNOT, O.; PAZ, B. C.; PAVANELLO, M. A. Evaluation of analog characteristics of n-Type vertically stacked nanowires. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020.
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This paper aims at analyzing the analog characteristics of n-type vertically stacked nanowires with 2 channels, varying the fin width and channel length. The basic electrical parameters such as threshold voltage and subthreshold slope are extracted in the linear region, whereas the transconductance, output conductance, and intrinsic voltage gain are extracted in saturation.