Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature
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2013-05-16
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NEMER, J. P.
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
Michelly De Souza
FLANDRE, D.
Marcelo Antonio Pavanello
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ECS Transactions
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NEMER, J. P.; DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Analog behavior of submicron graded-Channel SOI MOSFETs varying the channel length, doping concentration and temperature. ECS Transactions, v. 53, n. 5, p. 149-154, Mayo, 2013.
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In this paper the analog performance of Graded-Channel (GC) SOI nMOSFETs with deep submicrometer channel length is presented. Experimental data of GC transistors fabricated in an industrial 150 nm fully-depleted SOI technology from OKI Semiconductors were used to adjust the two-dimensional numerical simulations, in order to analyze the devices analog behavior by extrapolating their physical parameters. The obtained results show that the larger intrinsic voltage gain improvement occurs when the length of the lightly doped region is approximately 100 nm regardless the total channel length, doping concentration and temperature. © The Electrochemical Society.