Analysis of the self-heating effect in UTBOX devices
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2012-08-30
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RODRIGUES, M.
CRUZ, E. O.
Milene Galeti
MARTINO, J. A.
CRUZ, E. O.
Milene Galeti
MARTINO, J. A.
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ECS Transactions
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RODRIGUES, M.; CRUZ, E. O.; GALETI, M.; MARTINO, J. A. Analysis of the self-heating effect in UTBOX devices. ECS Transactions, v. 49, n. 1, p. 153- 160, 2012.
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This work presents a study of the self-heating effect (SHE) on -n type UTBOX devices. Thinner buried oxide indicated a reduction on degradation caused by the SH phenomenon as shown by drain current and transient time. Addressed to that, a smaller output conductance variation with the frequency was also related where a higher frequency is required for the SHE emergence. The ground plane region was also considered on the UTBOX devices indicating to be favorable in suppress the SHE. © The Electrochemical Society.