A novel overlapping circular-gate transistor (O-CGT) and its application to analog design
Nenhuma Miniatura disponível
Citações na Scopus
14
Tipo de produção
Artigo de evento
Data
2009-10-02
Autores
DE LIMA, J. A.
Salvador Gimenez
Salvador Gimenez
Orientador
Periódico
Proceedings of the Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009
Título da Revista
ISSN da Revista
Título de Volume
Citação
DE LIMA, J. A.; GIMENEZ, S. A novel overlapping circular-gate transistor (O-CGT) and its application to analog design. Proceedings of the Argentine School of Micro-Nanoelectronics, Technology and Applications 2009, EAMTA 2009, p. 11-16, Oct. 2009.
Texto completo (DOI)
Palavras-chave
Resumo
This paper introduces an Overlapping Circular-Gate Transistor (O-CGT) that allows gate overlaying between neighboring cells, enhancing layout packing with respect to conventional circular- and rectangular-gate structures. Although a section of gate annulus does not contribute to the drain current, a higher aspect-ratio is attained. Besides, both drain and source junctions have their area minimized, so that faster transients can be reached. A first-order model for (W/L)eff of the proposed device is developed and its validity attested by a range of 3D-simulation of IDS x VDS characteristics from ATLAS3D software. Error between analytical and 3Dsimulation data was limited to only 2.9%. With respect to a conventional circular-gate transistor (CGT), the O-CGT breakdown voltage BVDS is reduced by only 6.1%. An O-CGTbased power FET with on-resistance of tens of mO is laid out. An area saving of 18.6% is achieved as compared to rectangular geometries. O-CGT geometries as unit cells to compound a radiation-hardened OTA are also studied.