3D triple-gate simulation considering the crystallographic orientations
N/D
Tipo de produção
Artigo de evento
Data de publicação
2008-09-04
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
8
Autores
CONDE, J. E.
CERDEIRA, A.
Marcelo Antonio Pavanello
Orientadores
Resumo
Current in FinFET's transistors flows along two different crystallographic orientations, since, typically the FIN top region orientation is <100>, while the sidewalls have <110> orientation. In this paper we present how to represent the mesh structure for these devices, in order to simulate in 3-D, considering different mobility values for each orientation. Results of 3-D simulation considering also the effect of the series resistance are shown and compared with experimental results. © The Electrochemical Society.
Citação
CONDE, J. E.; CERDEIRA, A.; PAVANELLO, M. A. 3D triple-gate simulation considering the crystallographic orientations. ECS Transactions, v. 14, n. 1. p.197-201, Sept. 2008.
Palavras-chave
Keywords
Assuntos Scopus
Crystallographic orientations; Mesh structures; Mobility values; Series resistances; Side-walls