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3D triple-gate simulation considering the crystallographic orientations

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Tipo de produção

Artigo de evento

Data de publicação

2008-09-04

Texto completo (DOI)

Periódico

ECS Transactions

Editor

Citações na Scopus

8

Autores

CONDE, J. E.
CERDEIRA, A.
Marcelo Antonio Pavanello

Orientadores

Resumo

Current in FinFET's transistors flows along two different crystallographic orientations, since, typically the FIN top region orientation is <100>, while the sidewalls have <110> orientation. In this paper we present how to represent the mesh structure for these devices, in order to simulate in 3-D, considering different mobility values for each orientation. Results of 3-D simulation considering also the effect of the series resistance are shown and compared with experimental results. © The Electrochemical Society.

Citação

CONDE, J. E.; CERDEIRA, A.; PAVANELLO, M. A. 3D triple-gate simulation considering the crystallographic orientations. ECS Transactions, v. 14, n. 1. p.197-201, Sept. 2008.

Palavras-chave

Keywords

Assuntos Scopus

Crystallographic orientations; Mesh structures; Mobility values; Series resistances; Side-walls

Coleções

Avaliação

Revisão

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