Threshold voltages of SOI MuGFETs
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15
Tipo de produção
Artigo
Data
2008-12-05
Autores
de Andrade M.G.C.
Martino J.A.
Martino J.A.
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Periódico
Solid-State Electronics
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DE ANDRADE, M. G. C.; MARTINO, J. A. Threshold voltages of SOI MuGFETs. Solid-State Electronics, v. 52, n. 12, p. 1877-1883, Dec. 2008.
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The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. © 2008 Elsevier Ltd. All rights reserved.