Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs
Nenhuma Miniatura disponível
Citações na Scopus
1
Tipo de produção
Artigo
Data
2008
Autores
AGOPIAN P. G. D.
MARTINO, J, A.
SIMOEN, E.
CLAEYS, C.
MARTINO, J, A.
SIMOEN, E.
CLAEYS, C.
Orientador
Periódico
Solid-State Electronics
Título da Revista
ISSN da Revista
Título de Volume
Citação
AGOPIAN P. G. D.; MARTINO, J, A.; SIMOEN, E.; CLAEYS, C. Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs. Solid-State Electronics, v. 52, n. 11, p. 1751-1754, Nov. 2008.
Texto completo (DOI)
Palavras-chave
Resumo
The temperature influence on the gate-induced floating body effect (GIFBE) in fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs is investigated, based on experimental results and two-dimensional numerical simulations. The GIFBE behavior will be evaluated taking into account the impact of carrier recombination and of the effective electric field mobility degradation on the second peak in the transconductance (gm). This floating body effect is also analyzed as a function of temperature. It is shown that the variation of the studied parameters with temperature results in a "C" shape of the threshold voltage corresponding with the second peak in the gm curve. © 2008 Elsevier Ltd. All rights reserved.