Sidewall angle influence on the FinFET analog parameters
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Data
2007-09-06
Autores
Renato Giacomini
MARTINO, J. A.
Marcelo Antonio Pavanello
MARTINO, J. A.
Marcelo Antonio Pavanello
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Periódico
ECS Transactions
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GIACOMINI, R.; MARTINO, J. A.; PAVANELLO, M. A. Sidewall angle influence on the FinFET analog parameters. ECS Transactions, v. 9, n. 1, p. 37-45, Sept. 2007.
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The width variations along the vertical direction, due to process limitations, that appear in some fabricated FinFETs lead to non-rectangular cross-sectional shapes. One of the most frequent shapes is the trapezoidal (inclined sidewalls). These geometry variations may cause some changes in the device electrical characteristics. This work analyses the influence of the sidewall inclination angle on analog parameters, such as voltage gain, transconductance, output conductance, threshold voltage and also on the corner effects, through 3-D numeric simulation. © The Electrochemical Society.