Graded-channel SOI nMOSFET model valid for harmonic distortion evaluation
N/D
Tipo de produção
Artigo de evento
Data de publicação
2006-05-17
Texto completo (DOI)
Periódico
2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
Michelly De Souza
Marcelo Antonio Pavanello
CERDEIRA, A.
FLANDRE, D.
Orientadores
Resumo
In this paper an evaluation of the harmonic distortion of graded-channel SOI nMOSFETs is performed. The analysis is carried out by comparing an analytical continuous model and experimental results. The total harmonic distortion, as well as the third and second order terms are used as figures of merit in this comparison. It is shown that GC SOI devices present better gain and linearity behavior than conventional devices and that these advantages are well described by the proposed analytical model. The results show that the proposed set of equations is able to describe the linearity behavior of GC devices, indicating its potential to be used in analog circuit simulation and design. © 2006 IEEE.
Citação
DE SOUZA, M.; PAVANELLO, M. A.; CERDEIRA, A.; FLANDRE, D.Graded-channel SOI nMOSFET model valid for harmonic distortion evaluation. 2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings, Mayo, 2006.
Palavras-chave
Keywords
Assuntos Scopus
Continuous modeling; Figures of merits; Graded channels; Graded-channel SOI nMOSFET; Second orders; SOI devices; SOI n-MOSFETs; Total harmonic distortion (THD)