Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments
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2019-09-20
Autores
BOAS A. C. V.
DE MELO, M. A. A.
Roberto Santos
Renato Giacomini
MEDINA, N. H.
SEIXAS, L. E.
FINCO, S.
PALOMO, F. R.
ROMERO-MAESTRO A.
Marcilei Aparecida Guazzelli
DE MELO, M. A. A.
Roberto Santos
Renato Giacomini
MEDINA, N. H.
SEIXAS, L. E.
FINCO, S.
PALOMO, F. R.
ROMERO-MAESTRO A.
Marcilei Aparecida Guazzelli
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2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
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BOAS A. C. V.; DE MELO, M. A. A.; SANTOS, R.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRO A.; GUAZZELLI, M. A. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments. 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019, Sept. 2019.
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The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.