Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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Resultados da Pesquisa
- Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation(2012-03-17) DE SAOUZA, M. A. S.; CLAEYS, C.; Rodrido Doria; Marcelo Antonio Pavanello; SIMOEN, E.This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths. © 2012 IEEE.
- Analysis of gate capacitance of n-type junctionless transistors using three-dimensional device simulations(2012-03/17) MARINIELLO, G.; Rodrido Doria; Michelly De Souza; Marcelo Antonio Pavanello; TREVISOLI, R. D. G.Junctionless transistors can be an excellent alternative for extremely scaled MOSFETs as they present a good behavior with no doping gradients between channel and source/drain regions. This paper aims at analyzing the gate capacitance (C gg) of junctionless transistors dependence with the three most important technological parameters for these devices: doping concentration (N D), fin width (W fin) and fin height (H fin). © 2012 IEEE.
- Drain current model for junctionless nanowire transistors(2012-03-17) TREVISOLI, R. D.; Rodrido Doria; Michelly De Souza; Marcelo Antonio PavanelloJunctionless Nanowire Transistors (JNT) are considered as promising devices for sub-20 nm era due to the great scalability they provide. This work proposes a physically based analytical model for the drain current in JNTs. The proposed model is continuous from the subthreshold region to the saturation. The model is validated with 3D TCAD simulation and experimental results. © 2012 IEEE.