Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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8 resultados
Resultados da Pesquisa
- Comparative experimental study between diamond and conventional MOSFET(2010-01-05) Salvador Gimenez; ALATI, D.M.The focus of this work is to perform the experimental comparative study between Diamond and the conventional MOSFET counterpart in order to verify the benefits observed by three dimensional numerical simulations, considering the same geometric factor, die area and bias conditions, as described in first publication of Diamond style layout. The devices were manufactured by using the commercial manufacture CMOS process from 0.35μm AMI (On-Semiconductor) that is available in MOSIS Educational Program (MEP). The experimental results prove that Diamond MOSFET presents a better performance than one found in equivalent conventional transistor, except in relation to the Early voltage, due the higher impact ionization in the drain region than one observed in the conventional counterpart. Therefore the Diamond layout style is an important alternative to improve the performance of the analog, current drivers and pass switches integrated circuits applications. ©The Electrochemical Society.
- X-ray radiation effects in the circular-gate transistors(2011-01-05) CIRNE, K. H.; Marcilei Aparecida Guazzelli; DE LIMA, J. A.; SEIXAS JUNIOR, L. E.; Salvador GimenezThis work performs two experimental comparative analyses of the x-ray radiation effects in the Conventional, Wave and Overlapping-Circular-Gate nMOSFETs. In the first experiment, the x-ray radiation influence is studied without biasing the devices during the irradiation process, considering two channel lengths and after they have been exposed up to a x-ray irradiation of 1.5 Grad and with a dose ratio of 22 Mrad/min. The second one performs an experimental comparative study of the x-ray radiation influence between the Conventional and Overlapping-Circular Gate nMOSFET for a channel length equal to 12 μm, when they are submitted to the x-ray irradiation of 60 Mrad and maintaining the same bias conditions (overdrive gate and drain voltages) during the irradiation process. In both studies, we observe that the Overlapping-Circular Gate layout style presents higher x-ray irradiation robustness than those found in the other transistors studied, due to the absence of the bird's beak in Overlapping-Circular Gate MOSFET. ©The Electrochemical Society.
- Experimental study of the OCTO SOI nMOSFET and its application in analog integrated circuits(2012-09-02) FINO, L. N. D. S.; RENAUX, C.; FLANDRE, D.; Salvador GimenezThis paper presents an experimental comparative study between the OCTO, Diamond and Conventional Silicon-On-Insulator nMOSFETs (OSM, DSM and CSM, respectively), considering the same bias condition for all devices. The first comparison between the OSM and the CSM counterpart considers the same gate area and the second between the OSM and DSM regards the same geometric factor, in order to verify the benefits of the octagonal gate geometry, that uses the longitudinal corner effect to increase the resultant longitudinal electric field along of the channel, to improve the device performance and consequently to enhance the performance of analog integrated circuits. These characteristics can be observed on the main analog parameters such as drain current in saturation region, maximum transconductance, transconductance by drain current, voltage gain, unity voltage gain frequency and Early voltage. © The Electrochemical Society.
- Experimental comparative study between the wave layout style and its conventional counterpart for implementation of analog integrated circuits(2012-09-02) NAVARENHO, S. R.; Salvador GimenezThis paper performs an experimental comparative study between the Wave layout style ("S" shape gate geometry) and the Conventional (rectangular gate geometry) counterpart in order to verify and quantify the benefits that Wave structure can bring to improve the performance of devices in analog circuit, specially in trasconductance the ratio of transconductance between drain current as a function of the ratio of the drain current normalized by the geometric factor and frequency response (voltage gain and unit voltage gain frequency). By working with Wave structure instead of conventional counterpart, it can improve the device performance in terms of drain current in the triode and saturation regions, consequently better results in the transconductance and unit voltage gain frequency gains. © The Electrochemical Society.
- Using OCTO SOI nMOSFET to handle high current for automotive modules(2012-Jan. 05) FINO, L. N. D. S; Salvador GimenezThis paper presents an experimental comparative study between the OCTOGONAL-Gate Silicon-on-Insulator (SOI) nMOSFET (OSM) and the conventional SOI nMOSFET (CSM) considering the same bias conditions and the same gate area (AG), in order to verify the influence of this new MOSFET layout style to handle high current for automotive modules. Analog integrated circuits (ICs) design tends to be considered an art due to a large number of variables and objectives to achieve the product specifications. The designer has to find the right tradeoffs to achieve the desired automotive specification such as low power, low voltage, high speed and high current driver. SOI MOSFET's technology is required to provide the growth of embedded electronics. This growth is driving demand for power-handling devices that are smaller yet still provide high current driver capabilities. To optimize the transistor's operation, attending the aggressive downscaling and automotive requirements, emerges the OCTO SOI nMOSFET as an alternative to answer the current driver and sizing question. In addition, this innovative layout style can provide low-power and more robustness against Electromagnetic Interference (EMI), Electro Static Discharge (ESD), according to Electromagnetic Compatibility (EMC). Copyright © 2012 SAE International.
- Total ionizing dose radiation effects between the Wave layout style and its conventional counterpart focusing on the digital IC applications(2013-09-27) DE SOUZA, R. N.; Marcilei Aparecida Guazzelli; Salvador Gimenez© 2013 IEEE.This paper performs an experimental comparative study of the X-ray radiation effects between the Wave layout style (S-shaped gate geometry) and the Conventional (rectangular gate geometry) counterpart, focusing on the digital integrated circuits (IC) applications. Wave layout style demonstrates to be more tolerant regarding the total ionizing radiation (TID) effects for digital IC. By working with Wave layout style instead of the Conventional counterpart, it can significantly improve the device performance in terms of the threshold voltage (VTH), subthreshold slope (S), the on-state drain current (ION), the off-state drain current (IOFF), the ION/IOFF ratio, and the on- state drain to source series resistance (RON) and consequently the digital IC operating in radioactive environment.
- Improving MOSFETs radiation robustness by using the wave layout to boost analog ICs applications(2014-09-05) DE SOUZA, R. N.; Marcilei Aparecida Guazzelli; Salvador GimenezThis paper describes an experimental comparative study of the total ionizing dose (TID) effects between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with the Wave (S gate geometry) and the standard layouts (CnM). Because of the special characteristic of the bird's beaks regions of the Wave MOSFET (WnM), this innovative layout proposal for transistors is able to increase the devices TID hardness for analog integrated circuits (IC) applications in terms of the unity voltage gain frequency (fT) without causing any additional cost to the Complementary MOS (CMOS) manufacturing process.
- Boosting the MOSFETs matching by using diamond layout style(2016-09-03) PERUZZI, V. V.; RENAUX, C.; FLANDRE, D.; Salvador Gimenez© 2016 IEEE.This paper performs an experimental comparative study of the Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors (MOSFETs) matching, which are implemented with the hexagonal gate geometry (Diamond) and classical rectangular one. Some of the main analog parameters of 360 devices are investigated. The results demonstrate that the Diamond SOI MOSFETs with α angles equal to 53.1° and 90° are capable of boosting in more than 20% the devices matching in comparison to those observed in the typical rectangular SOI MOSFETs, regarding the same gate area and bias conditions. Therefore, the Diamond layout style is an alternative technique to reduce the MOSFETs' mismatching regarding the analog SOI CMOS ICs applications.