Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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12 resultados
Resultados da Pesquisa
- Evaluating the Reliability of Different Voting Schemes for Fault Tolerant Approximate Systems(2023-06-20) BALEN, T. R.; GONZALEZ, C. J.; OLIVEIRA, I. F. V.; DA ROSA JR. L. S.; SOARES, R. I.; SCHVITTZ, R. B.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; Marcilei Aparecida Guazzelli; MEDINA, N. H.; BUTZEN, P. F.© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This work presents a study on the reliability of voters for approximate fault tolerant systems in the context of single event effects and electromagnetic interference. A first case study analyses different topologies of single-bit majority voters for logic circuits employing fault injection by simulation. In these simulations, an analysis is first performed to identify the critical diffusion areas of the physical implementation according to the voter input vector. Additionally, as a second case study, practical heavy ion experiments on different architectures of software-based approximate voters for mixed-signal applications are also presented, and the cross section of each voter is evaluated. The system comprising the voters was irradiated in two distinct experiments with an 16O ion beam, producing an effective LET at the active region of 5.5 MeV/mg/cm 2 . As a complementary study, a conducted electromagnetic interference injection was also performed, considering two distinct voting schemes. Results of the case-studies allow identifying the most tolerant voter architectures (among the studied ones) for approximate computing applications under single event effects and electromagnetic interference.
- Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects(2023) ALLEGRO, P. R. P.; TOUFEN, D. L.; AGUIAR, V. A. P.; SANTOS, L. S. A.; OLIVEIRA W. N.; ADDED, N.; MEDINA, N. H.; MACCHIONE, E. L. A.; ALBERTON , S. G.; Marcilei Aparecida Guazzelli; MELO, M. A. A.; OLIVEIRA, J. A.© 2023This article presents a novel application of the k-means unsupervised machine learning algorithm to the problem of identifying single event transient (SET) events from noise during heavy-ion irradiation experiments of an electronic device. We explore the performance of the k-means algorithm by analyzing experimental datasets of SET events produced by several heavy-ions irradiations of a MOSFET transistor. Data anomalies and effectiveness of the chosen features (mean, standard deviation, skewness, and kurtosis) were investigated using the Isolation Forest and Random Forest algorithms, respectively. The results show a high capability of the K-means algorithm to identify SET events from noise using the first four statistical moments as features, allowing in the future the use of this method for in situ event detection and diagnosis without previous algorithm training or pre-analysis of the experimental data.
- Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET(2022-10-05) ALBERTON, S. G.; AGUIAR, V. A. P.; MEDINA, N. H.; ADDED, N.; MACCHIONE, E. L. A.; MENEGASSO, R.; CESARIO. G. J.; SANTOS, H. C.; SCARDUELLI, V. B.; ALCANTARA-NUNEZ, J. A.; Marcilei Aparecida Guazzelli; Roberto Santos; FLECHAS, D.© 2022 Elsevier LtdThe heavy-ion-induced single-event burnout (SEB) risk in power MOSFETs (metal-oxide-semiconductor field-effect transistors) can be assessed in ground facilities, although it is costly and time-demanding. For this reason, there have been few experimental studies dedicated to investigate the relevant parameter related to the description of ion-induced SEB phenomenon. In this work the heavy-ion-induced SEB in a low-voltage power VDMOSFET (vertical double-diffused MOSFET) is studied using several ion-energy combinations. A self-consistent statistical analysis is carried out in order to elucidate the relationship between charge deposition and SEB triggering. Experimental data is compared to a predictive model from the literature for SEE (single-event effect) worst-case prediction in power MOSFETs, supporting for the first time its relevance to the worst-case prediction in the SEB mechanism.
- Testing a Fault Tolerant Mixed-Signal Design Under TID and Heavy Ions(2021-01-05) GONZALEZ, C. J.; MACHADO, D. N.; VAZ, R. G.; VILAS BOAS, A. C.; GONLALEZ, O. L.; PUCHNER, H.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; KASTENSMIDT, F. L.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; BALEN, T. R.© 2021, Brazilian Microelectronics Society. All rights reserved.— This work presents results of three distinct radiation tests performed upon a fault tolerant data acquisition system comprising a design diversity redundancy technique. The first and second experiments are Total Ionizing Dose (TID) essays, comprising gamma and X-ray irradiations. The last experiment considers single event effects, in which two heavy ion irradiation campaigns are carried out. The case study system comprises three analog-to-digital converters and two software-based vot-ers, besides additional software and hardware resources used for controlling, monitoring and memory manage-ment. The applied Diversity Triple Modular Redundancy (DTMR) technique, comprises different levels of diversity (temporal and architectural). The circuit was designed in a programmable System-on-Chip (PSoC), fabricated in a 130nm CMOS technology process. Results show that the technique may increase the lifetime of the system under TID if comparing with a non-redundant implementation. Considering the heavy ions experiments the system was proved effective to tolerate 100% of the observed errors originated in the converters, while errors in the processing unit present a higher criticality. Critical errors occur-ring in one of the voters were also observed. A second heavy ion campaign was then carried out to investigate the voters reliability, comparing the the dynamic cross section of three different software-based voter schemes im-plemented in the considered PSoC.
- Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC(2015-07-13) TAMBARA, L. A.; KASTENSMIDT, F. L.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; Marcilei Aparecida Guazzelli© 2015 IEEE.The recent advance of silicon technology has allowed the integration of complex systems in a single chip. Nowadays, Field Programmable Gate Array (FPGA) devices are composed not only of the programmable fabric but also by hard-core processors, dedicated processing block interfaces to various peripherals, on-chip bus structures and analog blocks. Among the latest released devices of this type, this work focuses in the 28 nm Xilinx Zynq-7000 All Programmable SoC (APSoC). While not immune to the radiation environment in space, the Zynq-7000 seems to be very attractive for the aerospace sector due to its high computational power capability and low-power consumption. In this work, results from heavy ions testing for Zynq-7000 are presented. The experiments were performed in a Brazilian facility located at the University of São Paulo, Brazil.
- Electric field and temperature effects in irradiated MOSFETs(2016-12-04) Marcilei Aparecida Guazzelli; SANTOS, R. B. B.; LEITE, F. G.; ARAUJO, N. E.; CIRNE, K. H.; MELO, M. A. A.; RALLO, A.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; ADDED, N.; MEDINA, N.H.© 2016 Author(s).Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.
- Analysis of FPGA SEU sensitivity to combined effects of conducted EMI and TID(2016-05-17) BENFICA, J.; GREEN, B.; PORCHER, B. C.; POEHLS, L. B.; VARGAS, F.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P. DE; MACCHIONE, E. L. A.; AGUIRRE, F.; Marcilei Aparecida Guazzelli© 2016 IEEE.This work proposes a novel methodology to evaluate SRAM-Based FPGA SEU susceptibility to noise on VDD power pins and total-ionizing dose (TID). The procedure was demonstrated for SEU measurements on a Xilinx Spartan 3E FPGA operating in an 8MV Pelletron accelerator, whereas TID was deposited by means of a Shimadzu XRD-7000 X-ray diffractometer. The injected noise on power supply bus comprised of voltage dips of 16.67% and 25% of VDD at two different frequencies 10Hz and 5kHz, and was performed according to the IEC 61.000-4-29 international standard.
- Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA(2017) TONFAT, J.; KASTENSMIDT, F. L.; ARTOLA, L.; HUBERT, G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; Marcilei Aparecida Guazzelli© 2016 IEEE.This work highlights the impact of low LET heavy ions particles on the reliability of 28-nm Bulk SRAM cells from 4rtix-7 FPGA. Radiation tests showed significant differences in he MBU cross section of configuration (CRAM) and BRAM memory cells under various angles of incidence. Radiation results re compared with simulations at transistor level by using the ioft error tool, MUSCA SEP3 (MUlti-SCAle Single Event henomenon Prediction Platform) coupled with circuit imulations with the aim to analyze the differences of upset ensitivity as a function of layout SRAM. This analysis leads to etermine the correct layout and technology used in the tested PGA. By using the detailed classification of MBU events, it is ossible to analyze the effectiveness of correction mechanisms of he FPGA configuration memory.
- Reducing Soft Error Rate of SoCs Analog-to-Digital Interfaces with Design Diversity Redundancy(2020-03-05) GONZALEZ, C. J.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; KASTENSMIDT, F. G. L.; PUCHNER, H. K.; Marcilei Aparecida Guazzelli; MEDINA, N. H.; BALEN, T. R.© 1963-2012 IEEE.In this article, a commercial programmable system-on-chip (PSoC 5, from Cypress Semiconductor) is tested under heavy-ion irradiation with a focus on the analog-to-digital interface blocks of the system. For this purpose, a data acquisition system (DAS) was programmed into the device under test and protected with a design diversity redundancy technique. This technique implements different levels of diversity (architectural and temporal) by using two different architectures of converters (a Σ Δ converter and two successive approximation register (SAR) converters) operating with distinct sampling rates. The experiment was performed in a vacuum chamber, using a 16O ion beam with 36-MeV energy and sufficient penetration into the silicon to produce an effective linear energy transfer (LET) of 5.5 MeV/mg/cm2 at the active region. The average flux was approximately 350 particles/s/cm2 for 246 min. The individual susceptibility of each converter to single-event effects is evaluated, as well as the whole system cross section. Results show that the proposed technique is effective to mitigate errors originating at the converters since 100% of such errors were corrected by using the diversity redundancy technique. Results also show that the processing unit of the system is susceptible to hangs that can be mitigated using watchdog techniques.
- Experimental Setups for Single Event Effect Studies(2016) Medina, N. H.; Porcher, B.; AGUIAR, VITOR A. P.; ADDED, N.; AGUIRRE, F. R.; MACCHIONE, E. L. A.; Alberton, S.G.; SILVEIRA, M. A. G.; Guazzelli, Marcilei A.; Benfica, J.; VARGAS, FABIAN