Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3455
Title: Analysis of Mobility in Graded-Channel SOI Transistors aiming at Circuit Simulation
Authors: SILVA, LUCAS MOTA BARBOSA DA
PAZ, BRUNA CARDOSO
Michelly De Souza
Issue Date: 31-Jul-2020
Abstract: This work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors us-ing an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-di-mensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjust-ing its parameters. This approach presents a percentage error smaller than 7.91% for low VDS.
Keywords: Y-Function
Graded-Channel transistors
SOI
Effective mobility
SPICE simulation
Journal: JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
ISSN: 1807-1953
Citation: SILVA, L. M. B.; PAZ, B. C.; SOUZA, M. DE. Analysis of mobility in graded-channel SOI transistors aiming at circuit simulation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 15, n. 2, p. 1-5, 2020.
Access Type: Acesso Aberto
DOI: 10.29292/jics.v15i2.188
URI: https://repositorio.fei.edu.br/handle/FEI/3455
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