Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
Arquivos
Tipo de produção
Artigo
Data de publicação
2020-08-10
Texto completo (DOI)
Periódico
JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
PERUZZI , VINICIUS VONO
CRUZ, WILLIAM
SILVA, GABRIEL AUGUSTO DA
SIMOEN, EDDY
CLAEYS, COR
Salvador Gimenez
Orientadores
Resumo
This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect Transis-tors (MOSFETs), which were manufactured in an 130 nm Sili-con-Germanium Bulk Complementary MOS (CMOS) technol-ogy and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha () angle equal to 90 ̊ for MOSFETs is capable of re-ducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs.
Citação
PERUZZI , V. V.; CRUZ, W.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. Using the hexagonal layout style for MOSFETs to boost the device matching in Ionizing radiation environments. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
Palavras-chave
Diamond Layout Style; Hardness-by-design technique; MOSFETs matching, analog CMOS IC; Total Ion-izing Dose