Artigos
URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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5 resultados
Resultados da Pesquisa
- Saturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments(2005-10-03) Marcelo Antonio Pavanello; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.
- Analog operation of uniaxially strained FD SOI nMOSFETs in cryogenic temperatures(2007-10-04) Michelly De Souza; Marcelo Antonio Pavanello; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.
- Influence of temperature on the operation of strained triple-gate FinFETs(2008-10-09) Marcelo Antonio Pavanello; MARTINO, J. A.; SIMOEN, E.; ROOYACKERS, R.; COLLAERT, N.; CLAEYS, C.
- Fin shape influence on the analog performance of standard and strained MuGFETs(2010-10-14) BÜHLER, Rudolf Theoderich; MARTINO, J. A; AGOPIAN, P. G. D.; Renato Giacomini; SIMOEN, E.; CLAEYS, C.
- Uniaxial stress efficiency for different fin dimensions of triple-gate SOI nMOSFETs(2011-10-06) BÜHLER, Rudolf Theoderich; AGOPIAN, P. G. D.; Renato Giacomini; SIMOEN, E.; CLAEYS, C.; MARTINO, J. A.The stress profiles extracted showed that the variation in the silicon fin dimensions influence the stress levels and distributions along the silicon fin. From the analog performance view, these variations in the stress have influence on some electric parameters. The reduction of the total fin length showed no significant change in the parameters, although a reduction in the stress level was noticed, leading to the conclusion that the shift in the stress level is too small to cause a pronounced impact on the parameters. On the other hand, the reduction of the silicon fin height showed more interesting results. Despite that the standard device with smaller fin height presented a lower intrinsic voltage gain performance when compared to the reference device, when implementing strain it supersedes the reference device and presented an enhancement in the intrinsic voltage gain over the standard one up to 8 %, larger than the 5.1 % obtained for the reference device. © 2011 IEEE.