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URI permanente para esta coleçãohttps://repositorio.fei.edu.br/handle/FEI/798
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- Automatic detection of people with reduced mobility using YOLOv5 and data reduction strategy(2023-05-29) ADORNO, P. L. V.; JASENOVSKI, I. M.; SANTIAGO, D. F. DE M.; Leila Bergamasco© 2023 Copyright held by the owner/author(s).Context: A portion of the users in the São Paulo Metro are people who have physical limitations and need the help of wheelchairs or other similar devices. In this way, the Metro stations have elevators that allow these users to move between the floors of the station. In order, for the elevator to be used, it is necessary for the user to call the operators of the stations, who, in turn, check if the user who is requesting access to the elevator fits the target audience. Problem: This type of request requires manual validation by station operators, causing interruptions in their work routines and delays in passenger travel. Solution: To implement and evaluate artificial intelligence methods for automatic detection of people in wheelchairs or other auxiliary devices. IS Theory: This project was idealized from the perspective of Customer Focus Theory. Method: The You Only Look Once (YOLOv5) neural network was implemented in the Mobility Aids database. Tests were performed considering the original and modified base, composed of a reduced number of images, aiming to assess whether the accuracy of the model remains even with reduced database data. Summary of Results: The results obtained show an average accuracy of more than 92% with the modified database. Contribution: The results corroborated our methodology and we will be able to test in Sao Paulo subway with real images. In a long term, It is expected that by automating such a task, operators will be less overloaded and passengers with reduced mobility will gain more autonomy.
- Junctionless nanowire transistors effective channel length extraction through capacitance characteristics(2023-10-05) SILVA, E. M.; TREVISOLI, R.; Rodrigo Doria© 2023 Elsevier LtdThis work aims to extract the effective channel length (LEFF) of Junctionless Nanowire Transistors (JNT) through the maximum gate capacitance of the devices. The LEFF extraction has been done by extrapolating the maximum gate capacitance as a function of the devices’ channel length (LMASK) and has shown that LEFF is around 10–15 nm longer than LMASK for devices of different channel doping concentrations.
- Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors(2023-10-05) SILVA, L. M. B. DA; Marcelo Antonio Pavanello; CASSÉ, M.; BARRAUD, S.; VINET, M.; FAYNOT, O.; Michelly De Souza© 2023 Elsevier LtdThis work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors.
Artigo 1 Citação(ões) na Scopus The Haar wavelets used how expansion function in the method of the moments in the solution of some electrostatic problems(2010-08-05) Aldo Belardi; CARDOSO, J. R.; SARTORI, C. A. F.This work presents the methodology from the determination the charge superficial density and electrical fields, in three simple structures to a finite straight wire, square plane plates and the capacitance between to plane plate, all finite and submitted to a constant potential. That involves the method of the moments using as expansion function the Haar wavelets instead of the pulse function, in order to reach a good precision and reducing the computational execution time. We also intend to take advantages of the wavelets application through the Cholesky decomposition, talking about formation of scattered matrixes, and the detection of nulls values.Artigo 17 Citação(ões) na Scopus Thin-film lateral SOI pin diodes for thermal sensing reaching the cryogenic regime(2010-09-01) Michelly De Souza; RUE, B.; FLANDRE, D.; Marcelo Antonio PavanelloThis paper presents the performance of lateral SOI PIN diodes for temperature sensing in the range of 100 K to 400 K. Experimental results indicate that PIN diodes can be used to implement temperature sensors with high accuracy in cryogenic regime, provided that a suitable temperature range is chosen for calibration. Numerical simulations using Atlas two-dimensional simulator were performed in order to confirm this hypothesis and extend the analysis, verifying the accuracy of the existing model.Artigo 2 Citação(ões) na Scopus Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs(2010-09-05) Marcelo Antonio Pavanello; MARTINO, J. A.; SIMOEN, E.; ROOYACKERS, R.; COLLAERT, N.; CLAEYS, C.In this work the application of standard and strained triple-gate FinFETs in unity-gain source-follower configuration is compared. The analysis is performed by evaluating the buffer voltage gain with respect to the fin width and channel length as well as the total harmonic distortion. It is demonstrated that the application of strained material in narrow FinFETs, when the devices are operating in double-gate mode, can be beneficial for the performance of buffers in any channel length. On the other hand, for triple-gate FinFETs or quasi-planar ones the degradation of the output conductance overcomes the transconductance improvements from strained material and the performance of standard buffers is better than of strained ones. Narrow strained buffers also offer better harmonic distortion.Artigo 16 Citação(ões) na Scopus Temperature and silicon film thickness influence on the operation of lateral SOI PIN photodiodes for detection of short wavelengths(2011-09-05) Michelly De Souza; BULTEEL, O.; FLANDRE, D.; Marcelo Antonio PavanelloThis work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.Artigo 0 Citação(ões) na Scopus Influence of fin shape and temperature on conventional and strained MuGFETs' analog parameters(2011-09-05) BUHLER, R. T.; Giacomini R.; MARTINO, J. A.This work evaluates two important technological variations of Triple-Gate FETs: the use of strained silicon and the occurrence of non-rectangular body cross-section. The anaysis is focused on the electrical parameters for analog applications, and covers a temperature range from 150 K to 400 K. The comparison of the intrinsic voltage gain between the different trapezoidal fin shapes showed that the fin shape can have a major role in some analog parameters than the use of the strained silicon technology, helping to improve those parameters under certain circumstances. The highest intrinsic voltage gains were obtained for strained devices with top fin width larger than bottom at low temperature. Besides the intrinsic voltage gain, were also studied: the threshold voltage, subthreshold swing, drain induced barrier lowering, channel resistance, total harmonic distortion, transconductance, transconductance to drain current ratio, output conductance, Early voltage, drain voltage saturation and unity gain frequency.Artigo 0 Citação(ões) na Scopus QFT control applied to a Drive by Wire (DBW) system(2012-01-05) Delatore F.; Fabrizio Leonardi; CARVALHO, A. T.; MORIOKA, C. A.Tradionally, the throttle valve positioning was performed mechanically by means of a steel cable. Nowadays at the embedded system stage, an electromechanical system named as Drive by Wire (DBW) substitutes the direct positioning. The DBW is controlled by the vehicle Engine Control Unit (ECU) and is responsible to adjust the mass air flow delivered to the engine and to control the idle engine rotation. The throttle valve control is somehow a challenging task because of nonlinear phenomena caused by the spring and the gearbox. The present work aims to design a robust parametric control for a DBW system, using a plant model identified numerically at different operations points. The results show that the controller is able to deal with the nonlinear phenomena providing a reasonable performance with no steady state error and a consistent setting time.Artigo 0 Citação(ões) na Scopus Robust model matching control applied to a crane(2012-01-05) DE CAMPOS, E. L. L.; Fabrizio LeonardiThis paper discusses the robust closed loop control design subject to parametric uncertainties applied to a crane during a maneuver. Usually crane trajectories are generated by formulating a minimum time optimal control in open loop. However, the optimality of the solution is not maintained due to variations in the plant over time. This work proposes the use of a model matching structure to reduce the problems related to model uncertainties thus trying to preserve the trajectory optimality. The robust compensator minimizes explicitly the matching error between the real plant and the reference plant. In this application the main uncertain parameter is the pendulum length and plays the role of the load lifting. To illustrate the application experiments were done using a lab scale equipment. The results observed are very close to those obtained from numerical simulation.