Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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29 resultados
Resultados da Pesquisa
- Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS(2006-08-05) AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.In this work, the influence of the twin-gate structure on the gate-induced floating body effects in thin gate oxide partially depleted (PD) silicon-on-insulator (SOI) nMOSFETs is investigated through two-dimensional numerical simulations, which are validated by experimental results. The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be shown, as well as the relation between the total resistance and the effective mobility degradation factor. It will be demonstrated that a similar reduction of the linear kink effect is obtained in a twin-gate structure and in a conventional SOI transistor with an external resistance in series. © 2006 Elsevier Ltd. All rights reserved.
- Study of the linear kink effect in PD SOI nMOSFETs(2007-01-05) AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.We present in this work a study of the linear kink effect (LKE) occurrence in partially depleted (PD) SOI nMOSFETs with thin gate oxide. The experimental LKE dependence on the channel length, channel width and drain voltage are reported as well as the impact of various parameters on the second peak has been studied by two-dimensional numerical simulations, namely, the gate current level, the carrier lifetime, the increase of the body potential, the threshold voltage variation and AC analysis. Three-dimensional simulations were also performed in order to evaluate the LKE dependence on the channel width. © 2006 Elsevier Ltd. All rights reserved.
- DIBL performance of 60 MeV proton-irradiated SOI MuGFETs(2010-11-04) AGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; POIZAT, M.; SIMON, E.; CLAEYS, C.The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel on the front transistor performance. ©2010 IEEE.
- Fin shape influence on the analog performance of standard and strained MuGFETs(2010-10-14) BÜHLER, Rudolf Theoderich; MARTINO, J. A; AGOPIAN, P. G. D.; Renato Giacomini; SIMOEN, E.; CLAEYS, C.
- Global and/or local strain influence on p- and nMuGFET analog performance(2011-01-05) AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.In this work, the analog performance is evaluated for tri-gate p-and nMuGFETs processed with and without the implementation of different global or local strain engineering techniques. For n-channel devices, the intrinsic voltage gain showed to be worse for strained devices when the fin is narrow. Only for wider fins the voltage gain increases with the strain efficiency due to mobility enhancement. Besides the voltage gain, the transconductance, output conductance and Early Voltage are also evaluated. In spite of the smaller impact of strain engineering, pMuGFETs show better analog behavior for all studied parameters. ©The Electrochemical Society.
- A compact model and an extraction method for the FinFET spreading resistance(2011-09-02) Marcelo Parada; MALHEIRO, C. T.; AGOPIAN, P. G. D.; Renato GiacominiThis work presents a study of the FinFET series resistance focused on the spreading component. A new simple analytical expression is proposed to easily estimate and model this parasitic parameter. The extraction method departs from the drain current versus gate voltage curves of several channel and source/drain lengths. The resistance values extracted from simulated devices are compared to the outputs of the analytic model and a very good agreement is achieved. The proposed model showed accurate estimative for a wider range of devices then previously published models. © The Electrochemical Society.
- Strain effectiveness dependence on fin dimensions and shape for n-type triple-gate MuGFETs(2011-09-02) BÜHLER, Rudolf Theoderich; Renato Giacomini; AGOPIAN, P. G. D.; MARTINO, J. A.We analyze in this work, for the first time, the effectiveness and the dependence of the induced uniaxial stress on process variables, using the CESL technique on n-type MuGFETs thought 3D simulations. The fin cross-section shape variation is also included with a complete study on the stress distribution and the electric characterization of the device to measure the impact on its performance. The stress distribution and the device performance exhibited dependence with the shape and fin dimensions, with longer and taller inverse trapezium fin possessing better stress and DC characteristics, and better AC performance on the regular trapezium. ©The Electrochemical Society.
- A simple electron mobility model considering the impact of silicon-dielectric interface orientation for surrounding gate devices(2011-09-02) PERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; Renato GiacominiIn this work, we present a simple mobility model that takes into account the variation of the carrier's mobility according to crystallographic orientations of the silicon-dielectric interface. The effective mobility of simulated devices was compared to experimental data for several interface orientations and showed good agreement. The model has been applied to a CYNTHIA nMOS transistor and allowed the observation of non-uniform current density around the silicon pillar due to electron mobility variation. ©The Electrochemical Society.
- Alpha radiation incidence angle influence on planar FDSOI nMOSFET(2011) MAGALHAES, R. A.; AGOPIAN, P. G. D.; GUAZZELLI, M. A.; GIACOMINI, R. Alpha radiation incidence angle influence on planar FDSOI nMOSFET. ECS Transactions, v. 39, n. 1, p. 85-89, 2011.; AGOPIAN, P. G. D.; Marcilei Aparecida Guazzelli; Renato GiacominiThis work addresses the dependence of the incidence angle of alpha radiation on nMOSFET FDSOI transistor. The incidence angle ranged from -90 to 90 degrees in the two main symmetry planes of the device. The transitory effects were analyzed through three dimensional numerical simulations. The results showed considerable directivity to single event effects susceptibility. The generalized directivity can be used in the shielding engineering of electronic equipment subjected to isotropic radiation environments. © The Electrochemical Society.
- Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs(2011-09-23) AGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; SIMOEN, E.; CLAEYS, C.In this work the proton irradiation influence on basic and analog parameters of triple-gate SOI MOSFETs is investigated. The studied devices are strained and unstrained p- and nMuGFETs. The type of stress considered in each case, was the stress that results in a better performance of p- (CESL) and n-devices (sSOI+CESL). Although the results showed the worse behavior for post-irradiated nMOS transistors, a higher immunity to the back interface influence was obtained for post-irradiated pMOS devices and consequently a better analog performance was observed. The unit gain frequency improved for p and nMOS post-irradiated devices. © 2011 IEEE.
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