Engenharia Elétrica
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21
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18 resultados
Resultados da Pesquisa
Artigo de evento 0 Citação(ões) na Scopus Charge-based continuous explicit equations for the transconductance and output conductance of submicron graded-channel SOI mosfet's(2006-09-01) Michelly De Souza; Marcelo Antonio PavanelloThis paper presents charge-based continuous explicit equations for the transconductance and output conductance of submicron Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFET. Short-channel effects like channel length modulation, velocity saturation and drain-induced barrier lowering have been considered in the proposed expressions. Experimental results were used to test the equations by comparing not only the transconductance and the output conductance, but also the Early voltage and the open-loop voltage gain, showing a good agreement as well as smooth transitions between the different regions of operation, validating the proposed equations. © 2006 The Electrochemical Society.- Analysis of matching in graded-channel SOI MOSFETs(2007-09-06) Michelly De Souza; FLANDRE, D.; Marcelo Antonio PavanelloThis paper presents an analysis of mismatch in Graded-Channel (GC) SOI MOSFETs. Experimental results show that GC devices present poorer threshold voltage and drain current matching in comparison to conventional SOI counterpart. The analytical model for the drain current of GC devices is used to investigate the reasons for this matching worsening. Two-dimensional numerical simulations are used to predict the matching behavior both in linear and saturation regions. © The Electrochemical Society.
- Channel length influence on the performance of source-follower buffers implemented with graded-channel SOI nMOSFETs(2008-09-04) Michelly De Souza; FLANDRE, D.; Marcelo Antonio PavanelloThis work presents an evaluation of the influence of channel length on the performance of graded-channel (GC) SOI nMOSFETs operating as source-follower buffers. Experimental data is used to compare the buffer gain and linearity of GC and standard SOI nMOS transistors for different mask channel lengths and similar effective channel length. Two-dimensional numerical simulations were also performed, showing that the gain of buffers implemented with GC devices remains close to the theoretical limit even when short-channel devices are used. The simulated results indicate that the length of a source-follower buffer using GC devices can be reduced by a factor of 5, in comparison with the standard counterpart, without gain degradation or linearity worsening. © The Electrochemical Society.
- On the performance of thin-film lateral SOI PIN diodes as thermal sensors in a wide temperature range(2009-09-03) Michelly De Souza; RUE, B.; FLANDRE, D.; Marcelo Antonio PavanelloThis paper presents a study of lateral SOI PIN diodes as temperature sensors in the range of 100 K to 400 K. Experimental results indicate that PIN diodes can be used to implement temperature sensors with high accuracy in cryogenic regime, provided that a suitable temperature range is chosen. Numerical simulations using Atlas two-dimensional simulator were performed in order to confirm this hypothesis and extend this analysis, verifying the accuracy of the existing model. © The Electrochemical Society.
- Performance of common-source, Cascode and Wilson current mirrors implemented with graded-channel SOI nMOSFETs in a wide temperature range(2009-05-29) Michelly De Souza; FLANDRE, D.; Marcelo Antonio PavanelloThis work presents an experimental comparative analysis of the behavior of current mirrors implemented with standard uniformly doped and Graded-Channel (GC) SOI nMOSFETs as a function of the temperature. Three different current mirror architectures were used, Common-source, Wilson and Cascode. The experimental results show that the use of Graded-Channel transistors promotes not only the increase of the output swing, but also the increase of the output resistance in all evaluated architectures, in comparison to the standard uniformly doped counterpart. Despite some degradation observed with the temperature reduction, current mirrors with GC transistors still present better performance than those implemented with standard SOI transistors. ©The Electrochemical Society.
- Analysis of lateral SOI PIN diodes for the detection of blue and UV wavelengths in a wide temperature range(2010-01-05) Michelly De Souza; BULTEEL, O.; FLANDRE, D.; Marcelo Antonio PavanelloThis work presents an analysis on the performance of lateral thin-film SOI PIN diodes for the detection of short wavelengths, in the range of blue and ultra-violet (UV) wavelengms, as a function of the temperature, reaching the cryogenic regime. Measurements performed for temperatures ranging from 100 K to 400 K showed mat the optical responsitivity of these photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations were performed showing the same trends as the experimental data, and were used to predict the influence of silicon film thickness downscaling on me photodetector performance. ©The Electrochemical Society.
- Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET(2010-01-05) DA SILVA, E. L. R.; MIGUEZ, M.; Michelly De Souza; ARNAUD, A.; Marcelo Antonio PavanelloIn this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors. ©The Electrochemical Society.
- Parameter extraction in quadratic exponential junction model with series resistance using global lateral fitting(2010-01-05) LUGO-MUNOZ, D.; Michelly De Souza; Marcelo Antonio Pavanello; FLANDRE, D.; MUCI, J.; ORTI-CONDE, A.; GARCIA-SANCHEZ, F. J.A global lateral fitting procedure is proposed to extract the parameters of quadratic double exponential junction models in the presence of parasitic series resistance. Error analysis of the extracted parameters values within a large representative family of synthetic data indicate excellent match between the extracted values and a wide range of the original given model parameters. The procedure was also tested on real data to extract the model parameters of an experimental Silicon PIN diode measured at cryogenic temperature. ©The Electrochemical Society.
- Performance of ultra-low-power SOI CMOS diodes operating at low temperatures(2011-01-05) Michelly De Souza; RUE, B.; FLANDRE, D.; Marcelo Antonio PavanelloIn this work the low temperature performance of ultra-low-power SOI CMOS diodes is presented. Experimental measurements performed in fabricated devices from 148K to 373K show that the temperature lowering can promote a significant leakage current reduction and increase of the forward current. Two-dimensional numerical simulations are used to extend the studied temperature range and analyze the doping concentration influence on the low temperature operation of these diodes. ©The Electrochemical Society.
- The roles of the electric field and the density of carriers in the improved output conductance of junctionless nanowire transistors(2011-01-05) Rodrigo Doria; Marcelo Antonio Pavanello; TREVISOLI, R. D.; Michelly De Souza; LEE, C. W.; FERAIN, I.; DEHDASHTI AKHAVAN, N.; YAN, R.; RAZAVI, P.; YU, R.; KRANTI, A.; COLINGE, J. P.This paper evaluates the roles of the electric field (E) and the density of carries (n) in the drain conductance of Junctionless Nanowire Transistors (JNTs). The behavior of E and n presented by JNTs with the variation of the gate and the drain voltages has been compared to the one presented by Inversion Mode (M) Trigate devices of similar dimensions. It has been shown that the lower drain output conductance exhibited by Junctionless transistors with respect to the IM ones is correlated not only to the differences in the mobility and its degradation but also to the electric field, the density of carries and the first order derivative of these variables with respect the drain voltage. ©The Electrochemical Society.